BUK455 DATASHEET PDF

Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Accessories supplied. BUKA Powermos Transistor: 60v, 41a. N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in. Details, datasheet, quote on part number: BUKA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK Drain-source voltage Drain current (DC).

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buk455-200a.pdf

Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Application information Satasheet application information is given, it is advisory and does not form part of the specification.

Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. TOAB; pin 2 connected to mounting base.

Normalised drain-source on-state resistance. This data sheet contains final product specifications. Publication thereof does not convey nor imply any license under patent or other industrial or datasgeet property rights. Typical datasheeh, Ciss, Coss, Crss. Stress above one or more of the limiting values may cause permanent damage to the device.

New Product View Product Index. VDD August 5 Rev 1. Typical turn-on gate-charge characteristics.

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Normalised continuous drain current. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide.

BUKA NTE Equivalent NTE N channel MOSFET – Wholesale Electronics

Refer to mounting instructions for TO envelopes. Product specification This data sheet contains final product specifications. Normalised drain-source on-state resistance. Normalised avalanche energy rating.

These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. August 7 Rev 1.

Typical reverse diode current. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN. Philips customers using or selling these products dattasheet use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

PDF BUK455-200A Datasheet ( Hoja de datos )

Typical turn-on gate-charge characteristics. Normalised avalanche energy rating. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

August 7 Rev 1. August 6 Rev 1. Stress above one or more of the limiting values may datashwet permanent damage to the device. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

Avalanche energy test circuit. Avalanche energy test circuit. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. No liability will be accepted by the publisher for any consequence of its use. Exposure to limiting values for extended periods may affect device reliability. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

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C Philips Electronics N. UNIT – – 1. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Application information Where application information is given, it is advisory and does not form part of the specification.

Typical capacitances, Ciss, Coss, Crss. This data sheet contains target or goal specifications for product development. Exposure to limiting values for extended periods may affect device reliability.

TOAB; pin 2 connected to mounting base. Typical reverse diode current. Refer to mounting instructions for TO envelopes. Normalised continuous drain current. August 6 Rev 1. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.